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Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Author: Kalhor, N. · Mulckhuyse, W.F.W. · Alkemade, P.F.A. · Maas, D.J.
Publisher: SPIE
Source:Conference on Advances in Patterning Materials and Processes XXXII, 23-26 February 2015, San Jose, CA, USA, 9425
Advanced Lithography, Proceedings of SPIE - The International Society for Optical Engineering
Identifier: 523559
Keywords: Nanotechnology · Scanning helium ion beam lithography · EUV lithography · Chemically amplified resist · Metrology · Dose optimization modeling · Ion shot noise · Critical dimension · Line-width roughness · High Tech Systems & Materials · Industrial Innovation · Physics & Electronics · NI - Nano Instrumentation · TS - Technical Sciences


This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good agreement with earlier single-pixel SHIBL experiments for determining line width as a function of dose for a desired line-and-space pattern. Furthermore, we propose optimized-pixel-dose SHIBL to improve exposure latitude, LCDU and LWR. Dose optimization is advantageous to single-pixel exposure when the feature size is at least about twice the width of the FWHM of the point-spread function. We confirm this by comparing our modeling results for single-pixel and optimized-pixel-dose exposure modes for line-and-space patterns.