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Parameter study of intrinsicc carbon doping of Alx-Ga1-xAs by MOCVD

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Author: Deelen, J. van · Bauhuis, G.J. · Schermer, J.J. · Larsen, P.K.
Type:article
Date:2004
Publisher: Elsevier
Place: Amsterdam
Source:Journal of Crystal Growth, September, 271, 376-384
Identifier: 477757
Keywords: Materials · Doping · Metalorganic chemical vapor deposition · Carbon · Gallium compounds · Semiconducting III–V Materials · Industrial Innovation