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Characterization of electron-beam- and EUV photon-induced secondary electron emission

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Author: Hoeseni, F.I. · Theulings, A.M.M.G. · Hagen, K. · Veldhoven, J. van · Maas, D.J.
Type:lecture
Date:2016
Publisher: TNO ICCC
Place: Delft
Source:NEVAC dag, 27 mei 2016, Leiden, Nederland
Identifier: 536887
Keywords: Electronics · High Tech Systems & Materials · Industrial Innovation · Nano Technology · NI - Nano Instrumentation · TS - Technical Sciences

Abstract

TNO is developing a carbon-contamination-insensitive EUV power sensor that uses the photo-electric effect to distinguish between in- and out-of-band EUV. An LPP EUV source also emits out-of-band (OoB) photons, generating secondary electrons (SE’s) with a different energy than the SE’s generated by in-band EUV photons (13.5 nm, 92 eV). Characterization of the SE yield and energy distribution from carbon is required for the optimization of the EUV power sensor selectivity to in-band EUV photons. To this end, we designed a Secondary Electron Energy Distribution (SEED) analyzer, to measure the SE yield and energy distribution. First, the SEED analyzer will be validated with an e-beam, then in the TNO EUV Beam Line. This research is funded by the Dutch TKI program HTSM in collaboration with ASML and Carl Zeiss.