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Suitability of integrated protection diodes from diverse semiconductor technologies

Author: Wanum, M. van · Lebouille, T.T.N. · Visser, G.C. · Vliet, F.E. van
Type:article
Date:2009
Publisher: European Microwave Association EuMA
Place: Louvain-la-Neuve
Institution: TNO Defensie en Veiligheid
Source:European Microwave Week 2009 - EuMW 2009 - 4th European Microwave Integrated Circuits Conference - EuMIC 2009, 28 September - 2 October 2009, Rome, Italy, 294-297
Identifier: 272842
ISBN: 9782874870125
Keywords: Electronics · Diodes · Receivers · Protection · Comparison · Protection diodes · Electromagnetic interference · Gallium nitride GaN · Gaas

Abstract

In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in performance, but the possibility to integrate high quality passives will give better performance for Gallium Arsenide and Gallium Nitride based protection diodes.