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Thin film thermistor with positive temperature coefficient of resistance based on phase separated blends of ferroelectric and semiconducting polymers

Attachments

Author: Lenz, T. · Sharifi Dehsari, H. · Asadi, K. · Blom, P.W.M. · Groen, W.A. · Leeuw, D.M. de
Type:article
Date:2016
Publisher: American Institute of Physics Inc.
Source:Applied Physics Letters, 13, 109
Identifier: 572901
doi: doi:10.1063/1.4963349
Article number: 133302
Keywords: Curie temperature · Diodes · Ferroelectricity · Polymers · Positive temperature coefficient · Semiconducting polymers · Semiconductor diodes · Thin film devices · Ferroelectric memory · Ferroelectric polarization · Ferroelectric polymers · Positive temperature coefficient thermistors · Switching temperatures · Temperature coefficient of resistance · Thin film thermistor · Thermistors · Industrial Innovation · Nano Technology · HOL - Holst · TS - Technical Sciences

Abstract

We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric polarization. At the Curie temperature the ferroelectric polymer depolarizes and consequently the current density through the semiconductor decreases by orders of magnitude. The diode therefore acts as switching type PTC thermistor. Unlike their inorganic counterparts, the PTC thermistors presented here are thin film devices. The switching temperature can be tuned by varying the Curie temperature of the ferroelectric polymer.