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Determination of the trap-assisted recombination strength in polymer light emitting diodes

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Author: Kuik, M. · Nicolai, H.T. · Lenes, M. · Wetzelaer, G.-J.A.H. · Lu, M. · Blom, P.W.M.
Source:Applied Physics Letters, 9, 98
Identifier: 461490
Article number: No.: 093301
Keywords: Electronics · Free carrier recombination · Langevin · Langevin recombination · Light intensity · Low bias voltage · Numerical modeling · Photogenerated current · PLED devices · Poly(p-phenylenevinylene) · Polymer light emitting diode · Polymer light-emitting diodes · Prefactors · Recombination channels · Recombination process · Recombination rate · Recombination strength · Light emission · Light emitting diodes · Open circuit voltage · Current voltage characteristics · Industrial Innovation · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences


The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination channel in PLEDs, which has not been considered until now. The dependence of the open-circuit voltage on light intensity enables us to determine the strength of this process. Numerical modeling of the current-voltage characteristics incorporating both Langevin and trap-assisted recombination yields a correct and consistent description of the PLED, without the traditional correction of the Langevin prefactor. At low bias voltage the trap-assisted recombination rate is found to be dominant over the free carrier recombination rate. © 2011 American Institute of Physics.