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Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

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Author: Blanker, J. · Vroon, Z. · Zeman, M. · Smets, A.
Type:article
Date:2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source:43rd IEEE Photovoltaic Specialists Conference, PVSC 2016. 5 June 2016 through 10 June 2016, 611-614
Identifier: 575370
doi: doi:10.1109/PVSC.2016.7749670
ISBN: 9781509027248
Article number: 7749670
Keywords: Materials · Amorphous silicon · Doping additives · Efficiency · Indium · Plasma CVD · Plasma enhanced chemical vapor deposition · Silicon oxides · Zinc oxide · Active-area efficiency · Hydrogenated amorphous silicon · A-Si:H · Monolithically integrated · PE CVD · Spectral utilization · Thin film photovoltaics · Tunnel recombination junctions · Multi-junction solar cells · Industrial Innovation · Nano Technology · TFT - Thin Film Technology · TS - Technical Sciences

Abstract

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TFPV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current generation per layer is much lower, allowing much thinner absorber layers of CIGS. In this contribution we demonstrate working fabricated devices of CIGS bottom cells that are monolithically integrated with a hydrogenated amorphous silicon (a-Si:H) top cell. The proposed structures are a unique fusion of two distinct fabrication methods, being co-evaporation and plasma enhanced chemical vapor deposition (PE-CVD). In addition, devices without any ZnO have been processed. In those cells a nc-SiOx:H n-layer acted as an electron recipient and lateral insulator for the CIGS p-layer, and a highly p- and n-doped nc-SiOx:H layer served as the tunnel recombination junction. The top TCO on the a-Si:H cell was varied with ZnO:Al (AZO) and In2O3/Sn2O3 (ITO). Efficiencies of the not yet optimized devices have reached 7.9% active area efficiency (with Voc=1.23V, FF=64%, Jsc= 9.95 mA/cm2).