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Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

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Author: Gelinck, G.H. · Cobb, B. · Breemen, A.J.J.M. van · Myny, K.
Publisher: Institute of Physics Publishing
Source:Semiconductor Science and Technology, 7, 30
Identifier: 527783
doi: doi:10.1088/0268-1242/30/7/074003
Article number: 074003
Keywords: Electronics · IGZO · Amorphous films · Data storage equipment · Ferroelectric materials · Ferroelectricity · Memory architecture · Metals · MOS devices · Thin film transistors · Ferroelectric polymers · Flexible thin films · Indium gallium zinc oxides · Non-volatile memory · Oxide transistors · Process temperature · PVDF-TrFE · Industrial Innovation · Nano Technology · HOL - Holst · TS - Technical Sciences


Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. cop. 2015 IOP Publishing Ltd.