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On the Origin of Dark Current in Organic Photodiodes

Attachments

Author: Simone, G. · Dyson, M.J. · Weijtens, C.H.L. · Meskers, S.C.J. · Coehoorn, R. · Janssen, R.A.J. · Gelinck, G.H.
Type:article
Date:2019
Publisher: Wiley-VCH Verlag
Source:Advanced Optical Materials
Identifier: 870207
doi: doi:10.1002/adom.201901568
Article number: 1901568
Keywords: Bulk heterojunction · Charge injection · Dark current · Organic photodiodes · Reverse bias

Abstract

Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (Jd) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of Jd in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of Jd are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating Jd to material parameters, insights into the origin of Jd are obtained that enable the future selection of successful OPD materials.