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Helium ion beam lithography of thick HSQ resists

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Author: Alkemade, P.F.A. · Langen-Suurling, A.K. van · Drift, E. van der · Veldhoven, E. van · Maas, D.J.
Type:article
Date:2012
Source:56th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication, May 29-June 1, 2012, Waikolo, Hawaii, USA
Identifier: 463675
Keywords: Chemistry · Industrial Innovation · Physics & Electronics · NI - Nano Instrumentation · TS - Technical Sciences

Abstract

In this work we study the resist thickness dependence of SHIBL in negative tone (HSQ) resist. The ion beam used is a 30 keV focused He+ beam of an OrionPlus helium ion microscope. The structures made are dots, single and multiple lines, and squares. The resist thickness is varied between 4 and 162 nm. The substrate is silicon.