Veldhoven, E. van
|Source:||La Fontaine, B.M.Naulleau, P.P., Extreme Ultraviolet (EUV) Lithography II, 28 February 2011 through 3 March 2011, San Jose, CA. Conference code: 85007, 7969, 79690X-1 - 79690X-9|
|Proceedings of SPIE - The International Society for Optical Engineering|
Physics · cleaning · EUVL · inspection · repair · reticles · Physics & Electronics · NI - Nano Instrumentation · TS - Technical Sciences
We report on our findings on EUVL reticle contamination removal, inspection and repair. We show that carbon contamination can be removed without damage to the reticle by our plasma process. Also organic particles, simulated by PSL spheres, can be removed from both the surface of the absorber as well as from the bottom of the trenches. The particles shrink in size during the plasma treatment until they are vanished. The determination of the necessary cleaning time for PSL spheres was conducted on Ru coated samples and the final experiment was performed on our dummy reticle. Finally we show that the Helium Ion Microscope in combination with a Gas Injection System is capable of depositing additional lines and squares on the reticle with sufficient resolution for pattern repair. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).