The introduction of EUV Lithography for the next node has two major obstacles at the moment; the first is source power and reliability and the second is defect free reticles and damage free cleaning of reticles. We present our results on our investigation for damage free cleaning of EUV reticles with remote plasma cleaning for molecular (carbon) contamination and nanobubbles for particle removal. We believe that a multi step approach is necessary for cleaning of reticles as a single cleaning step will not be sufficient for the efficient removal of molecular as well as particle contamination. Remote plasma seems to be the favorable technique for carbon cleaning and repeated cleaning up to 85 nm of carbon removal shows no degradation of the reticle material. © 2012 SPIE.