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Characterization of the effects that play a role in photonic strain sensors in silicon-on-insulator technology

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Author: Westerveld, W.J. · Pozo Torres, J.M. · Harmsma, P.J. · Schmits, R. · Tabak, E. · Leinders, S.M. · Dongen, K.W.A. van · Urbach, H.P. · Yousefi, M.
Type:article
Date:2011
Source:16th Annual Symposium of the IEEE Photonics Benelux Chapter, Gent, Belgium, 2011
Identifier: 446751
Keywords: Physics · Photonic strain sensors · Silicon on insulator technology · Industrial Innovation · Physics & Electronics · NI - Nano Instrumentation · TS - Technical Sciences

Abstract

Recently there has been a growing interest in sensing by means of optical microring resonators in photonic integrated circuits (PIC) that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. proposed the use of a waveguide based ring resonator as a strain gauge. However, the strong lateral confinement of the light in SOI waveguides and its corresponding modal dispersion was not taken into account. We present experimental results and understanding of the effects of an applied strain in the effective index in a SOI-PIC. In addition, we also investigated the influence of the waveguide geometry.