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Multilevel information storage in ferroelectric polymer memories

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Author: Tripathi, A.K. · Breemen, A.J.J.M. van · Shen, J. · Gao, Q. · Ivan, M.G. · Reimann, K. · Meinders, E.R. · Gelinck, G.H.
Source:Advanced Materials, 36, 23, 4146-4151
Identifier: 436602
Keywords: Electronics · ferroelectric polymers · imprinting · multibit storage · non-volatile memories · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences


Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.