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Effect of n-type doping on the hole transport in poly(p-phenylene vinylene)

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Author: Lu, M. · Nicolai, H.T. · Wetzelaer, G.-J.A.H. · Blom, P.W.M.
Type:article
Date:2011
Source:Journal of Polymer Science, Part B: Polymer Physics, 24, 49, 1745-1749
Identifier: 461359
Keywords: Materials · charge transport · molecular doping · organic semiconductors · polymer light-emitting diodes · Electron transport · Hole transports · Hole trapping · MEH-PPV · Molecular doping · n-Type doping · Orders of magnitude · Organic semiconductor · P-phenylene vinylene · Poly(p-phenylenevinylene) · polymer light-emitting diodes · Aromatic compounds · Hole mobility · Hole traps · Light emission · Organic light emitting diodes (OLED) · Quenching · Semiconductor diodes · Semiconductor doping · Industrial Innovation · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences

Abstract

N-type doping of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n-type doping simultaneously suppresses the hole transport in MEH-PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC-doped MEH-PPV polymer light-emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc.