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Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics

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Author: Torricelli, F. · Ghittorelli, M. · Smits, E.C.P. · Roelofs, C.W.S. · Janssen, R.A.J. · Gelinck, G.H. · Kovács-Vajna, Z.M. · Cantatore, E.
Type:article
Date:2016
Publisher: Wiley-VCH Verlag
Source:Advanced Materials, 2, 28, 284-290
Identifier: 531364
doi: DOI:10.1002/adma.201503414
Keywords: Electronics · Complementary electronics · Ambipolar conduction · Ambipolar semiconductors · Ambipolar transistors · Electronic memory · Polymer transistors · Tri-gate transistors · Industrial Innovation · Nano Technology · HOL - Holst · TS - Technical Sciences

Abstract

Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics with an on/off current ratio of larger than 105 are obtained. This enables easy integration into low-power complementary logic and volatile electronic memories. cop. 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.