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Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

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Author: Löffler, J. · Schropp, R.E.I. · Groenen, Ft. · Van De Sanden, M.C.M. · Linden, J.L.
Type:article
Date:2000
Publisher: Institute of Electrical and Electronics Engineers Inc.
Institution: Technisch Physische Dienst TNO - TH
Source:28th IEEE Photovoltaic Specialists Conference, PVSC 2000, 15 September 2000 through 22 September 2000, 892-895
Identifier: 530868
doi: DOI:10.1109/PVSC.2000.916027
ISBN: 0780357728
Article number: 916027
Keywords: Electronics · Chemical vapor deposition · Electrodes · Plasma CVD · Solar cells · Zinc oxide · ZnO · Amorphous silicon

Abstract

Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterteed with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. First solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F. cop. 2000 IEEE.