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Protection Circuit for High Power Amplifiers Operating Under Mismatch Conditions

Author: Bent, G. van der · Wanum, M. van · Hek, A.P. de · Graaf, M.W. van der · Vliet, F.E. van
Type:article
Date:2007
Publisher: European Microwave Association EuMA
Place: Louvain-la-Neuve
Institution: TNO Defensie en Veiligheid
Source:European Microwave Week EuMW 2007 - Proceedings of the 2nd European Microwave Integrated Circuits Conference - EuMIC 2007, 8-10 October 2007, ICM - Munich International Congress Centre, Munich, Germany, 158-161
Identifier: 222471
Keywords: Physics · MMICs · Power amplifiers · Protection

Abstract

A protection circuit is developed which protects transistors in the output stage of a High Power Amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 μm GaAs power pHEMT process (PP50-11) of WIN Semiconductors