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Field effect enhancement in buffered quantum nanowire networks

Author: Krizek, F. · Sestoft, J.E. · Aseev, P. · Marti-Sanchez, S. · Vaitiekénas, S. · Casparis, L. · Khan, S.A. · Liu, Y. · Stankevic, T. · Whiticar, A.M. · Fursina, A. · Boekhout, F. · Koops, R. · Uccelli, E. · Kouwenhoven, L.P. · Marcus, C.M. · Arbiol, J. · Krogstrup, P.
Type:article
Date:2018
Publisher: American Physical Society APS
Place: College Park, MD, USA
Source:Physical review materials
Identifier: 843963
Keywords: Nanotechnology · High Tech Systems & Materials · Industrial Innovation

Abstract

Semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.