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Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

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Author: Erkens, I.J.M. · Verheijen, M.A. · Knoops, H.C.M. · Keuning, W. · Roozeboom, F. · Kessels, W.M.M.
Publisher: American Institute of Physics Inc.
Source:Journal of Chemical Physics, 5, 146
Identifier: 575384
doi: doi:10.1063/1.4972120
Article number: 052818
Keywords: Chemistry · High resolution transmission electron microscopy · Metallic films · Platinum · Pulsed laser deposition · Thickness measurement · Thin films · Transmission electron microscopy · Vapor deposition · High aspect ratio trenches · Pt thin films · ALD · Atomic layer deposition · Industrial Innovation · Nano Technology · HOL - Holst · TS - Technical Sciences


To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.