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EBL2, a flexible, controlled EUV exposure and surface analysis facility

Author: Sligte, E. te · Koster, N.B. · Molkenboer, F.T. · Deutz, A.F.
Type:article
Date:2016
Publisher: TNO
Source:Nobuyuki, Y., Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 6-8 April 2016, Yokohama, Japan
Identifier: 536269
Keywords: Electronics · EUV exposure · Mask pellicle · XPS analysis · Metrology handling · High Tech Systems & Materials · Industrial Innovation · Nano Technology · NI - Nano Instrumentation · TS - Technical Sciences

Abstract

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source. EUV intensity, pupil, spectrum, and repetition rate are all adjustable. In-situ measurements by ellipsometry will enable real time monitoring of the sample condition. The XPS will be capable of analyzing the full surface area of EUV masks and pellicles, as well as performing angle resolved analysis on smaller samples. Sample transfer between the XPS and the Beam Line will be possible without breaking vacuum.