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Polymer light-emitting diodes with doped hole-transport layers

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Author: Lu, M. · Nicolai, H.T. · Kuik, M. · Wetzelaer, G.-J.A.H. · Wildeman, J. · Palmaerts, A. · Blom, P.W.M.
Type:article
Date:2011
Source:Physica Status Solidi A: Applications and Materials, 10, 208, 2482-2487
Identifier: 443015
Keywords: Electronics · Hole-transport layer · Light-emitting diodes · Poly(phenylenevinylenes) · Polymers · Bi-layer · Double layers · Electron blocking · F4-TCNQ · Hole transport layers · Operating voltage · Orders of magnitude · Poly(p-phenylene vinylene) derivatives · Polymer light-emitting diodes · Solution-processed · Voltage drop · Functional polymers · Light emission · Light emitting diodes · Quenching · Doping (additives) · Industrial Innovation · Mechatronics, Mechanics & Materials · HOL - Holst · TS - Technical Sciences

Abstract

We demonstrate a solution processed bi-layer PLED based on poly(p-phenylene vinylene) derivatives using orthogonal solvents. To lower the voltage drop the hole transport layer (HTL) based on poly[2,5-bis(2-ethylhexyloxy)-co-2,5- bis(butoxy)-1,4-phenylenevinylene] (BEH/BB-PPV (1:3)) is doped with tetracyano-tetrafluoro-quinodimethane (F4TCNQ). The conductivity of BEH/BB-PPV (1:3) was observed to increase by two orders of magnitude upon doping with F4TCNQ. The doped HTL was observed to lower the operating voltage of a double layer PLED, but suffers from additional quenching by the dopant at higher voltages due to the lack of an electron blocking functionality. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.