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A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivation

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Author: Roozeboom, F. · Kniknie, B.J. · Lankhorst, A.M. · Winands, G. · Knaapen, R. · Smets, M. · Poodt, P.W.G. · Dingemans, G. · Keuning, W. · Kessels, W.M.M.
Type:article
Date:2012
Publisher: IOP
Place: Eindhoven
Source:E-MRS 2012 Spring Meeting: Symposium M
series:
IOP Conf. Series: Materials Science and Engineering
Identifier: 466712
doi: doi:10.1149/05032.0073ecst
Keywords: Physics · High Tech Systems & Materials · Industrial Innovation · Mechatronics, Mechanics & Materials · TFT - Thin Film Technology · TS - Technical Sciences

Abstract

Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to form gaseous SiFx etch products, and 2) passivation with C4F8 that polymerizes as a protecting fluorocarbon deposit on the sidewalls and bottom of the etched features. In this work we report on a novel alternative and disruptive technology concept of Spatially-divided Deep Reactive Ion Etching, S-DRIE, where the process is converted from the time-divided into the spatially divided regime. The spatial division can be accomplished by inert gas bearing ‘curtains’ of heights down to ~20 um. These curtains confine the reactive gases to individual (often linear) injection slots constructed in a gas injector head. By horizontally moving the substrate back and forth under the head one can realize the alternate exposures to the overall cycle. A second improvement in the spatially divided approach is the replacement of the CVD-based C4F8 passivation steps by ALD-based oxide (e.g. SiO2) deposition cycles. The method can have industrial potential in cost-effective creation of advanced 3D interconnects (TSVs), MEMS manufacturing and advanced patterning, e.g., in nanoscale transistor line edge roughness using Atomic Layer Etching.