Repository hosted by TU Delft Library

Home · Contact · About · Disclaimer ·
 

Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

Publication files not online:

Author: Blanker, J. · Vroon, Z.A.E.P. · Zeman, M. · Smets, A.
Type:article
Date:2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source:44th IEEE Photovoltaic Specialist Conference, PVSC 2017. 25 June 2017 through 30 June 2017, 1-4
Identifier: 810208
Keywords: Amorphous silicon · Copper compounds · Doping (additives) · Efficiency · Gallium compounds · II-VI semiconductors · Indium compounds · Plasma CVD · Plasma enhanced chemical vapor deposition · Zinc oxide · Active-area efficiency · Current generation · Hydrogenated amorphous silicon (a-Si:H) · Monolithically integrated · Plasma enhanced chemical vapor depositions (PE CVD) · Spectral utilization · Thin film photovoltaics · Tunnel recombination junctions · Multi-junction solar cells

Abstract

Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TF-PV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current generation per layer is much lower, allowing much thinner absorber layers of CIGS. In this contribution we demonstrate working fabricated devices of CIGS bottom cells that are monolithically integrated with a hydrogenated amorphous silicon (a-Si:H) top cell. The proposed structures are a unique fusion of two distinct fabrication methods, being co-evaporation and plasma enhanced chemical vapor deposition (PE-CVD). In addition, devices without any ZnO have been processed. In those cells a nc-SiOx:H n-layer acted as an electron recipient and lateral insulator for the CIGS p-layer, and a highly p- and n-doped nc-SiOx:H layer served as the tunnel recombination junction. The top TCO on the a-Si:H cell was varied with ZnO:Al (AZO) and In2O3/Sn2O3 (ITO). Efficiencies of the not yet optimized devices have reached 7.9% active area efficiency (with Voc=1.23V, FF=64%, Jsc= 9.95 mA/cm2). © 2017 IEEE. Newport