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Radiation hardness of silicon integrated nano photonic devices

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Author: Ebeling, R. · Yang, S. · Bodis, P. · Harmsma, P.J. · Berg, J.H. van den · Boom, C.W. de · Yousefi, M.
Type:article
Date:2010
Place: Delft
Institution: TNO Industrie en Techniek
Source:Proceedings Symposium IEEE Photonics Benelux Chapter. Proc. 2010 Annual Symposium of the IEEE Photonics Society Benelux Chapter, Delft, The Netherlands, November 2010, 217-220
Identifier: 427942
Keywords: Physics · Physics & Electronics · NI - Nano Instrumentation · TS - Technical Sciences

Abstract

Integrated Nano Photonic (INP) sensors will be used in medical and space applications in the near future. Therefore, these devices must also be able to withstand harsh environments without failure. For space and medical applications radiation hardness is a very important issue. At TNO we have investigated the radiation hardness of nano photonic devices using electro-magnetic radiation and high energy particles. We have bombarded various ring resonators and couplers with gamma rays, protons and electrons. After the tests the device operation is verified and compared to non-radiated devices.