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EUV blank defect and particle inspection with high throughput immersion AFM with 1nm 3D resolution


Author: Es, M.H. van · Sadeghian Marnani, H.
Publisher: SPIE
Source:Sanchez, M.I.Ukraintsev, V.A., 30th Conference on Metrology, Inspection, and Process Control for Microlithography, 22-25 February 2016, 9778
Proceedings of SPIE - The International Society for Optical Engineering
Identifier: 546173
ISBN: 9781510600133
Article number: 97782Z
Keywords: AFM · EUV mask · Massively parallel · Throughput · Atomic force microscopy · Nanocantilevers · Photomasks · Substrates · Surface topography · Units of measurement · 3D resolution · High throughput · Measurement bandwidth · Oscillation amplitude · Surface characterization · Target application · Process control · High Tech Systems & Materials · Industrial Innovation · Nano Technology · OM - Opto-Mechatronics · TS - Technical Sciences


Inspection of EUV mask substrates and blanks is demanding. We envision this is a good target application for massively parallel Atomic Force Microscopy (AFM). We envision to do a full surface characterization of EUV masks with AFM enabling 1nm true 3D resolution over the entire surface. The limiting factor to do this is in the sensor itself: throughput is limited by the time that a cantilever needs to adjust its oscillation amplitude to the surface topography while scanning. We propose to use heavily damped cantilevers to maximize the measurement bandwidth. We show that using up to 20.000 cantilevers in parallel we can then reach a throughput of one 152×152mm2 substrate per 2 days with 1nm resolution.