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Highly stable carbon nanotube top-gate transistors with tunable threshold voltage

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Author: Wang, H. · Cobb, B. · Breemen, A. van · Gelinck, G.H. · Bao, Z.
Type:article
Date:2014
Publisher: Wiley-VCH Verlag
Source:Advanced Materials, 26, 26, 4588-4593
Identifier: 513445
doi: doi:10.1002/adma.201400540
Keywords: Electronics · Carbon nanotubes · Stable · Thin film transistors · Threshold voltage · Dielectric materials · Industrial Innovation · Mechanics, Materials and Structures · HOL - Holst · TS - Technical Sciences

Abstract

Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time. cop. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.