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First light on EBL2

Author: Koster, N.B. · Sligte, E. te · Molkenboer, F.T. · Deutz, A.F. · Walle, P. van der · Muilwijk, P.M. · Mulckhuyse, W.F.W. · Oostdijck, B.W. · Hollemans, C.L. · Nijland, B.A.H. · Kerkhof, P.J. · Putten, M. van · Westerhout, J.
Type:article
Date:2017
Publisher: Society of Photo-optical Instrumentation Engineers SPIE
Source:Panning, E.M.Goldberg, K.A., Extreme Ultraviolet (EUV) Lithography VIII Conference, 27 February - 2 March 2017, San Jose, CA, USA,, 10143
series:
Proceedings of SPIE
Identifier: 756323
Keywords: Electronics · EUV exposure · Mask · Pellicle · XPS analysis · Metrology · Handling · Contamination control · High Tech Systems & Materials · Industrial Innovation · Nano Technology · NI - Nano Instrumentation SSE - Space Systems Engineering OM - Opto-Mechatronics · TS - Technical Sciences

Abstract

TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components requiring EUV exposure. EBL2 consists of a EUV Beam Line, a XPS system, and sample handling infrastructure. Recently we finished installation of the source, exposure chamber, handlers and XPS system. This paper describes the integration process and first light of the EUV source. EBL2 accepts a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility to facilitate wafer printing on scanners after exposure in EBL2. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source from Ushio. EUV intensity, spectrum, and repetition rate are all adjustable. The XPS system is now operational and accepts samples up to reticle size.