Print Email Facebook Twitter Exchange effects on electron transport through single-electron spin-valve transistors Title Exchange effects on electron transport through single-electron spin-valve transistors Author Wetzels, W. Bauer, G.E.W. Grifoni, M. Faculty Applied Sciences Department Kavli Institute of Nanoscience Date 2006-12-11 Abstract We study electron transport through single-electron spin-valve transistors in the presence of nonlocal exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the “orthodox model” for Coulomb blockade and we allow for noncollinear lead magnetization directions. Two distinct exchange mechanisms that have been discussed in the literature are shown to be of comparable strength and are taken into account on equal footing. We present results for the linear conductance as a function of gate voltage and magnetic configuration, and discuss the response of the system to applied magnetic fields. To reference this document use: http://resolver.tudelft.nl/uuid:40bf0fd2-33ac-4820-8121-d9fc1ecb998d DOI https://doi.org/10.1103/PhysRevB.74.224406 Publisher American Physical Society ISSN 0163-1829 Source Physical Review B, 74 (22), 2006 Part of collection Institutional Repository Document type journal article Rights (c) 2006 The Author(s); American Physical Society Files PDF Wetzels_2006.pdf 338.68 KB Close viewer /islandora/object/uuid:40bf0fd2-33ac-4820-8121-d9fc1ecb998d/datastream/OBJ/view