Print Email Facebook Twitter Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells Title Room-temperature sputtered tungsten-doped indium oxide for improved current in silicon heterojunction solar cells Author Han, C. (TU Delft Photovoltaic Materials and Devices; Shenzhen Institute of Wide-bandgap Semiconductors) Zhao, Y. (TU Delft Photovoltaic Materials and Devices) Mazzarella, L. (TU Delft Photovoltaic Materials and Devices) Santbergen, R. (TU Delft Photovoltaic Materials and Devices) Bento Montes, A.R. (TU Delft Photovoltaic Materials and Devices; University of Lisbon) Procel Moya, P.A. (TU Delft Photovoltaic Materials and Devices) Yang, G. (TU Delft Photovoltaic Materials and Devices) Zhang, Xiaodan (Nankai University) Zeman, M. (TU Delft Electrical Sustainable Energy) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2021 Abstract The window layers limit the performance of silicon heterojunction (SHJ) solar cells with front and back contacts. Here, we optimized tungsten-doped indium oxide (IWO) film deposited by radio frequency magnetron sputtering at room temperature. The opto-electrical properties of the IWO were manipulated when deposited on top of thin-film silicon layers. The optimal IWO on glass shows carrier density and mobility of 2.1 × 1020 cm−3 and 34 cm2 V−1s−1, respectively, which were tuned to 2.0 × 1020 cm−3 and 47 cm2 V−1s−1, as well as 1.9 × 1020 cm−3 and 42 cm2 V−1s−1, after treated on i/n/glass and i/p/glass substrates, respectively. Using the more realistic TCO data that were obtained on thin-film silicon stacks, optical simulation indicates a promising visible-to-near-infrared optical response in IWO-based SHJ device structure, which was demonstrated in fabricated devices. Additionally, by adding an additional magnesium fluoride layer on device, the champion IWO-based SHJ device showed an active area cell efficiency of 22.92%, which is an absolute 0.98% efficiency gain compared to the ITO counterpart, mainly due to its current gain of 1.48 mA/cm2. Subject Improved near-infrared responseRoom temperature transparent electrodeSilicon heterojunction solar cellTungsten-doped indium oxide To reference this document use: http://resolver.tudelft.nl/uuid:58af890d-7a45-4f81-8b85-b6f7a269c2be DOI https://doi.org/10.1016/j.solmat.2021.111082 ISSN 0927-0248 Source Solar Energy Materials & Solar Cells, 227 Part of collection Institutional Repository Document type journal article Rights © 2021 C. Han, Y. Zhao, L. Mazzarella, R. Santbergen, A.R. Bento Montes, P.A. Procel Moya, G. Yang, Xiaodan Zhang, M. Zeman, O. Isabella Files PDF 1_s2.0_S0927024821001239_main.pdf 5.38 MB Close viewer /islandora/object/uuid:58af890d-7a45-4f81-8b85-b6f7a269c2be/datastream/OBJ/view