PECVD silicon carbide surface micromachining technology and selected MEMS applications

PECVD silicon carbide surface micromachining technology and selected MEMS applications

Rajaraman, V.
Pakula, L.S.
Yang, H.
French, P.J.
Sarro, P.M.

Electrical Engineering, Mathematics and Computer Science

Microelectronics

2011-01-20

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with integrated circuits. In this paper we present a generic surface micromachining technology developed using a stressoptimised PECVD SiC as the structural and encapsulation material for MEMS. An overview of selected MEMS applications realised, at DIMES Technology Center (DTC) of TU Delft, using the PECVD SiC surface micromachining technology is provided. Presented MEMS examples include—a pressure sensor, wafer-level thin-film packaging, RF switch and accelerometers. Potential applications for the presented technology include automotive, industrial and medical systems, where devices are often subjected to harsh environments.

silicon carbide (SiC)
microelectromechanical systems (MEMS)
micromachining
pressure sensor
accelerometer
RF switch
wafer-level packaging (WLP)
thin film encapsulation (TFE)

http://resolver.tudelft.nl/uuid:5ea69950-11d1-45f5-9cc6-e08c98fbba13

https://doi.org/10.1007/s12572-010-0020-9

Springer

2011-01-28

International Journal of Advances in Engineering Sciences and Applied Mathematics, 2 (1), 2011

Institutional Repository

journal article

(c) 2011 Rajaraman, V.
Pakula, L.S.
Yang, H.
French, P.J.
Sarro, P.M.