Print Email Facebook Twitter Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain Title Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain Author Island, J.O. Kuc, A. Diependaal, E.H. Bratschitsch, R. Van der Zant, H.S.J. Heine, T. Castellanos-Gomez, A. Faculty Applied Sciences Department Quantum Nanoscience Date 2016-01-14 Abstract We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by ?27 ± 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of ?32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications. Subject Gold for GoldOpen Access To reference this document use: http://resolver.tudelft.nl/uuid:647556be-dccb-4616-8873-cbf06f045e71 DOI https://doi.org/10.1039/C5NR08219F Publisher RSC Publishing ISSN 2040-3372 Source Nanoscale, 2016,8, 2589-2593 Part of collection Institutional Repository Document type journal article Rights (c) 2016 RSC Files PDF c5nr08219f.pdf 1.11 MB Close viewer /islandora/object/uuid:647556be-dccb-4616-8873-cbf06f045e71/datastream/OBJ/view