Print Email Facebook Twitter Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides Title Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides Author Pandraud, G. Margallo-Balbas, E. Sarro, P.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Delft Institute of Microsystems and Nanoelectronics Date 2012-11-22 Abstract We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a sensor, we simulated the confinement factor in the slot. This simulation revealed that SiC-based slot waveguides can be used, advantangeously, for sensing as the confinement strongly varies with the refractive index of the slot material. A confinement factor change of 0.15?refractive index units was measured for different slot materials Subject slot waveguide, confinement analysis, plasma-enhanced chemical vapor deposition SiC, sensing To reference this document use: http://resolver.tudelft.nl/uuid:69dff217-498e-4567-b421-7ef46d04b0ba DOI https://doi.org/10.1117/1.JNP.6.063530 Publisher SPIE (International Society for Optical Engineering) ISSN 0091-3286 Source http://nanophotonics.spiedigitallibrary.org/article.aspx?articleid=1411786 Source Journal of Nanophotonics, 6(1)2012 Part of collection Institutional Repository Document type journal article Rights (c)2012 Pandraud, G., Margallo-Balbas, E., Sarro, P.M. and SPIE Files PDF Pandraud.pdf 655.01 KB Close viewer /islandora/object/uuid:69dff217-498e-4567-b421-7ef46d04b0ba/datastream/OBJ/view