Print Email Facebook Twitter High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells Title High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells Author Han, C. (TU Delft Photovoltaic Materials and Devices; Nankai University; Shenzhen Institute of Wide-bandgap Semiconductors) Mazzarella, L. (TU Delft Photovoltaic Materials and Devices) Zhao, Y. (TU Delft Photovoltaic Materials and Devices) Yang, G. (TU Delft Photovoltaic Materials and Devices) Procel Moya, P.A. (TU Delft Photovoltaic Materials and Devices) Tijssen, M. (TU Delft Photovoltaic Materials and Devices) Bento Montes, A.R. (TU Delft Photovoltaic Materials and Devices) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Department Electrical Sustainable Energy Date 2019 Abstract Broadband transparent conductive oxide layers with high electron mobility (μe) are essential to further enhance crystalline silicon (c-Si) solar cell performances. Although metallic cation-doped In2O3 thin films with high μe (>60 cm2 V-1 s-1) have been extensively investigated, the research regarding anion doping is still under development. In particular, fluorine-doped indium oxide (IFO) shows promising optoelectrical properties; however, they have not been tested on c-Si solar cells with passivating contacts. Here, we investigate the properties of hydrogenated IFO (IFO:H) films processed at low substrate temperature and power density by varying the water vapor pressure during deposition. The optimized IFO:H shows a remarkably high μe of 87 cm2 V-1 s-1, a carrier density of 1.2 × 1020 cm-3, and resistivity of 6.2 × 10-4 ω cm. Then, we analyzed the compositional, structural, and optoelectrical properties of the optimal IFO:H film. The high quality of the layer was confirmed by the low Urbach energy of 197 meV, compared to 444 meV obtained on the reference indium tin oxide. We implemented IFO:H into different front/back-contacted solar cells with passivating contacts processed at high and low temperatures, obtaining a significant short-circuit current gain of 1.53 mA cm-2. The best solar cell shows a conversion efficiency of 21.1%. Subject electron mobilityhydrogenated fluorine-doped indium oxide (IFO:H)passivating contactssilicon heterojunction (SHJ)transparent conductive oxide (TCO) To reference this document use: http://resolver.tudelft.nl/uuid:a0a5dd9b-f411-4b25-a5c6-22094fced256 DOI https://doi.org/10.1021/acsami.9b14709 ISSN 1944-8244 Source ACS applied materials & interfaces, 11 (49), 45586-45595 Bibliographical note green Part of collection Institutional Repository Document type journal article Rights © 2019 C. Han, L. Mazzarella, Y. Zhao, G. Yang, P.A. Procel Moya, M. Tijssen, A.R. Bento Montes, O. Isabella, M. Zeman, More Authors Files PDF acsami.9b14709.pdf 2.87 MB Close viewer /islandora/object/uuid:a0a5dd9b-f411-4b25-a5c6-22094fced256/datastream/OBJ/view