Print Email Facebook Twitter Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography Title Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography Author Sidorkin, V. Van der Drift, E.W.J.M. Salemink, H. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2008-12-01 Abstract Performance of hydrogen silsesquioxane (HSQ) resist material with respect to the temperature during electron beam exposure was investigated. Electron beam exposure at elevated temperatures up to 90?°C shows sensitivity rise and slight contrast (?) degradation compared to lower temperature cases. Ultrahigh resolution structures formed at elevated temperatures manifest better uniformity together with aspect ratio improvement and less linewidth broadening with overdose. Potential mechanisms for observed phenomena are proposed. Subject atomic force microscopyelectron beam lithographyorganic compoundsresists,scanning electron microscopyResist temperaturehydrogen silsesquioxaneelectron beam heating To reference this document use: http://resolver.tudelft.nl/uuid:c48fa6d2-383c-4e85-a418-1d2bd9d2de78 Publisher American Vacuum Society ISSN 1071-1023 Source https://doi.org/10.1116/1.2987965 Source Journal of Vacuum Science & Technology B, 26 (6), 2008 Part of collection Institutional Repository Document type journal article Rights © 2008 American Vacuum Society Files PDF Sidorkin_2008.pdf 426.99 KB Close viewer /islandora/object/uuid:c48fa6d2-383c-4e85-a418-1d2bd9d2de78/datastream/OBJ/view