Print Email Facebook Twitter Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films Title Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films Author Prokhorov, V.G. Kaminsky, G.G. Kim, J.M. Eom, T.W. Park, J.S. Lee, Y.P. Svetchnikov, V.L. Levtchenko, G.G. Nikolaenko, Y.M. Khokhlov, V.A. Faculty Applied Sciences Date 2011-04-01 Abstract Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO3 (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60?000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism. Subject charge-ordered statescolossal magnetoresistanceCurie temperaturemagnetic epitaxial layersmetal-insulator transitionneodymium compoundssputter depositionstrontium compounds To reference this document use: http://resolver.tudelft.nl/uuid:d35ed474-1ca4-4650-943e-dfa9226d7dc7 DOI https://doi.org/10.1063/1.3592229 Publisher American Institute of Physics ISSN 1063-777X Source http://link.aip.org/link/doi/10.1063/1.3592229 Source Low Temperature Physics, 37 (4), 2011 Part of collection Institutional Repository Document type journal article Rights © 2011 The Author(s)American Institute of Physics Files PDF Svetchnikov_2011.pdf 800.22 KB Close viewer /islandora/object/uuid:d35ed474-1ca4-4650-943e-dfa9226d7dc7/datastream/OBJ/view