Print Email Facebook Twitter Lanthanide impurity level location in GaN, AlN, and ZnO Title Lanthanide impurity level location in GaN, AlN, and ZnO Author Dorenbos, P. Van der Kolk, E. Faculty Applied Sciences Department Radiation, Radionuclides and Reactors Date 2007-02-07 Abstract A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu,...Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AlN, their solid solutions AlxGa1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb3+ emission and the location of the energy levels is explained. Subject GaNAINZnOlanthanideslocalized states To reference this document use: http://resolver.tudelft.nl/uuid:dd5050eb-657e-41f6-aeb0-1b86048f09db Publisher SPIE ISSN 0277-786X Source Proceedings of SPIE, 2007 vol. 6473 Part of collection Institutional Repository Document type conference paper Rights (c)2007 Dorenbos, P., Van der Kolk, E. Files PDF LanthanideDorenbospdf.pdf 270.49 KB Close viewer /islandora/object/uuid:dd5050eb-657e-41f6-aeb0-1b86048f09db/datastream/OBJ/view