Low percolation density and charge noise with holes in germanium

Title

Low percolation density and charge noise with holes in germanium

 Author

Lodari, M. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0003-0493-4129
Hendrickx, N.W. (TU Delft QCD/Veldhorst Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0003-4224-7418
Lawrie, W.I.L. (TU Delft QCD/Veldhorst Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0002-9946-4117
Hsiao, T. (TU Delft QCD/Vandersypen Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0001-5140-2809
Vandersypen, L.M.K. (TU Delft QuTech Advanced Research Centre; TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft) ORCID 0000-0003-4346-7877
Sammak, A. (TU Delft BUS/TNO STAFF; TU Delft QuTech Advanced Research Centre) ORCID 0000-0002-9776-9099
Veldhorst, M. (TU Delft QN/Veldhorst Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0001-7086-8305
Scappucci, G. (TU Delft QCD/Scappucci Lab; TU Delft QuTech Advanced Research Centre; Kavli institute of nanoscience Delft) ORCID 0000-0003-2512-0079

 Date

2021

 Abstract

We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55 nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of 2.1 × 10 10 cm−2 , indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet
operation of hole quantum dots and we measure an average charge noise level of √SE = 0.6 μeV/√Hz at 1 Hz, with the lowest level below our detection limit√SE = 0.2 μeV/√Hz. These results establish planar Ge as a promising platform for scaledtwo-dimensional spin qubit arrays

 Subject

quantum technology
germanium
charge noise
quantum dots

 To reference this document use:

http://resolver.tudelft.nl/uuid:f7af7217-bd69-428c-877a-4b9be5148674

 DOI

https://doi.org/10.1088/2633-4356/abcd82

 ISSN

2633-4356

 Source

Materials for Quantum Technology, 1 (1)

 Part of collection

Institutional Repository

 Document type

journal article

 Rights

© 2021 M. Lodari, N.W. Hendrickx, W.I.L. Lawrie, T. Hsiao, L.M.K. Vandersypen, A. Sammak, M. Veldhorst, G. Scappucci
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