Print Email Facebook Twitter Synchronization of Bloch oscillations by gate voltage modulation Title Synchronization of Bloch oscillations by gate voltage modulation Author Erdmanis, J. (TU Delft QN/Nazarov Group; Kavli institute of nanoscience Delft) Nazarov, Y.V. (TU Delft QN/Nazarov Group; Kavli institute of nanoscience Delft) Date 2022 Abstract We propose to synchronize Bloch oscillations in a double phase-slip junction by modulating the gate voltage rather than the bias voltage. We show this is advantageous, and the relatively small ac modulation of the gate voltage gives rise to the pronounced plateaus of quantized current of the width of the order of Coulomb blockade threshold. We theoretically investigate the setup distinguishing three regimes of strong, weak, and intermediate coupling, defined by the ratio of the gate capacitance C and the effective capacitance of the phase-slip junctions. An important feature of the intermediate-coupling regime is the occurrence of the fractional plateaus of the quantized current. We investigate the finite temperature effects, finding an empirical scaling for the smoothing of integer plateaus. To reference this document use: http://resolver.tudelft.nl/uuid:113e86d5-efea-47a6-8f1e-ca8094234a7b DOI https://doi.org/10.1103/PhysRevB.106.235406 ISSN 2469-9950 Source Physical Review B, 106 (23) Part of collection Institutional Repository Document type journal article Rights © 2022 J. Erdmanis, Y.V. Nazarov Files PDF PhysRevB.106.235406.pdf 1.31 MB Close viewer /islandora/object/uuid:113e86d5-efea-47a6-8f1e-ca8094234a7b/datastream/OBJ/view