Print Email Facebook Twitter Mechanical cleaning of graphene Title Mechanical cleaning of graphene Author Goossens, A.M. Calado, V.E. Barreiro, A. Watanabe, K. Taniguchi, T. Vandersypen, L.M.K. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2012-02-16 Abstract Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples of high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical cleaning based on contact mode atomic force microscopy removes residues and significantly improves the electronic properties. A mechanically cleaned dual-gated bilayer graphene transistor with hexagonal boron nitride dielectrics exhibited a mobility of ?36 000?cm2/Vs at low temperature. Subject atomic force microscopyboron compoundselectron mobilityfullerene devicesgraphenesurface cleaning To reference this document use: http://resolver.tudelft.nl/uuid:7a27d0af-14b2-4fca-9966-67d5afe8104a DOI https://doi.org/10.1063/1.3685504 Publisher American Institute of Physics ISSN 0003-6951 Source http://apl.aip.org/resource/1/applab/v100/i7/p073110_s1 Source Applied Physics Letters, 100 (7), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 The Author(s)American Institute of Physics Files PDF Goossens_2012.pdf 629.36 KB Close viewer /islandora/object/uuid:7a27d0af-14b2-4fca-9966-67d5afe8104a/datastream/OBJ/view