Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

Tang, Zhuorui (Fudan University)
Gu, Lin (Fudan University)
Jin, Lei (48th Research Institute of China Electronics Technology Group Corporation)
Dai, Kefeng (Jihua Laboratory)
Mao, Chaobin (Jihua Laboratory)
Wu, Sanzhong (Jihua Laboratory)
Zhang, Rongwei (Ningbo Xinsheng Medium Voltage Electrical Appliance Co., Ltd.)
Yang, Jinsong (Ningbo Xinsheng Medium Voltage Electrical Appliance Co., Ltd.)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)

2024

In this work, 4H-SiC homoepitaxial layers were grown on 4°off-axis substrates at different susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different susceptor rotation speed on the quality of 4H-SiC epitaxial layers in terms of thickness, thickness uniformity, crystallinity, surface morphology and morphological defects was investigated via Fourier transform infrared spectroscopy (FTIR), high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), confocal differential interference contrast microscopy (CDIC), ultra-violet photo-luminescence spectroscopy (UV-PL), scanning electron microscopy (SEM), and micro-Raman spectroscopy, respectively. A flow field simulation was performed to explain the impact of susceptor rotation speed on the film deposition. The FTIR results suggested that the susceptor rotation speed could be an important factor to adjust thickness uniformity and deposition rate. The XRD patterns showed that crystallinity was independent of the susceptor rotation speed. The surface morphology can be improved by changing the susceptor rotation speed. According to CDIC scans, the down-fall related defects were reduced through the increase in the susceptor rotation speed. The origin of down-fall related defects was interpreted by Raman spectroscopy and speculative models. To sum up, the susceptor rotation speed is a crucial factor in increasing growth rate and improving uniformity. Also, the faster susceptor rotation speed helps reduce the number of down-fall related defects in the hot-wall CVD reactor.

4H-SiC homoepitaxial layer
CVD reactor
susceptor rotation speed
quality
defects

http://resolver.tudelft.nl/uuid:d30c564e-03ed-42eb-9049-e010cc339fa2

https://doi.org/10.1016/j.mtcomm.2024.108037

2024-07-15

2352-4928

Materials Today Communications, 38

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Institutional Repository

journal article

© 2024 Zhuorui Tang, Lin Gu, Lei Jin, Kefeng Dai, Chaobin Mao, Sanzhong Wu, Rongwei Zhang, Jinsong Yang, Kouchi Zhang, More Authors