Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

Kang, Xuanwu (Fudan University; Chinese Academy of Sciences)
Sun, Y. (TU Delft Electronic Components, Technology and Materials; Shenzhen Institute of Wide-bandgap Semiconductors; Chinese Academy of Sciences)
Zheng, Yingkui (Chinese Academy of Sciences)
Wei, Ke (Chinese Academy of Sciences)
Wu, Hao (Fudan University; Chinese Academy of Sciences)
Zhao, Yuanyuan (Chinese Academy of Sciences)
Liu, Xinyu (Chinese Academy of Sciences)
Zhang, Kouchi (Fudan University)

2021

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 μm has achieved a very high ON/OFF current ratio (Iscriptscriptstyle ON/Iscriptscriptstyle OFF of 1012 with a low leakage current of ∼ 10-9 A/cm2@-10 V, high forward current density of 5.2 kA/cm2 at 3 V in dc, a low differential specific ON-resistance (Rscriptscriptstyle ONsp) of 0.3 m Ω cm2, and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) I-V test was carried out and 53 kA/cm2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.

GaN
high forward current density
leakage
mesa
quasi
Schottky barrier diode (SBD)
transmission-line-pulse (TLP)
vertical.

http://resolver.tudelft.nl/uuid:fa187565-2f24-4b6b-9360-ae177687e9ab

https://doi.org/10.1109/TED.2021.3050739

0018-9383

IEEE Transactions on Electron Devices, 68 (3), 1369-1373

Institutional Repository

journal article

© 2021 Xuanwu Kang, Y. Sun, Yingkui Zheng, Ke Wei, Hao Wu, Yuanyuan Zhao, Xinyu Liu, Kouchi Zhang