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Rahman, R. (author), Lansbergen, G.P. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Park, S.H. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies with a domain of over 1.4 million atoms, taking...journal article 2011
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Rahman, R. (author), Lansbergen, G.P. (author), Park, S.H. (author), Verduijn, J. (author), Klimeck, G. (author), Rogge, S. (author), Hollenberg, L.C.L. (author)Adiabatic shuttling of single impurity bound electrons to gate-induced surface states in semiconductors has attracted much attention in recent times, mostly in the context of solid-state quantum computer architecture. A recent transport spectroscopy experiment for the first time was able to probe the Stark shifted spectrum of a single donor in...journal article 2009
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Rahman, R. (author), Park, S.H. (author), Boykin, T.B. (author), Klimeck, G. (author), Rogge, S. (author), Hollenberg, L.C.L. (author)The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin...journal article 2009