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Lansbergen, G.P. (author), Rahman, R. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower...journal article 2011
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Rahman, R. (author), Lansbergen, G.P. (author), Verduijn, J. (author), Tettamanzi, G.C. (author), Park, S.H. (author), Collaert, N. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies with a domain of over 1.4 million atoms, taking...journal article 2011