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Metal–organic framework based mixed matrix membranes: A solution for highly efficient CO2 capture?

Seoane, B. (author), Coronas, J. (author), Gascon, I. (author), Benavides, M.E. (author), Karvan, O. (author), Caro, J. (author), Kapteijn, F. (author), Gascon, J. (author)

The field of metal–organic framework based mixed matrix membranes (M4s) is critically reviewed, with special emphasis on their application in CO2 capture during energy generation. After introducing the most relevant parameters affecting membrane performance, we define targets in terms of selectivity and productivity based on existing literature...

journal article 2015

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On-chip optical trapping and Raman spectroscopy using a TripleX dual-waveguide trap

Boerkamp, M. (author), Van Leest, T. (author), Heldens, J. (author), Leinse, A. (author), Hoekman, M. (author), Heideman, R. (author), Caro, J. (author)

We present a new approach to the dual-beam geometry for on-chip optical trapping and Raman spectroscopy, using waveguides microfabricated in TripleX technology. Such waveguides are box shaped and consist of SiO2 and Si3N4, so as to provide a low index contrast with respect to the SiO2 claddings and low loss, while retaining the advantages of...

journal article 2014

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Tuning of a cavity in a silicon photonic crystal by thermal expansion of an elastomeric infill

Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)

We use an elastomer as infill material for a photonic crystal. As a result of the thermal-expansion-induced strongly negative thermal optical coefficient, this material is highly suitable for thermal tuning of the transmission of a cavity. This is demonstrated by global infilling of a hole-type silicon photonic crystal slab and global thermal...

journal article 2011

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Thermal tuning of a silicon photonic crystal cavity infilled with an elastomer

Erdamar, A.K. (author), Van Leest, M.M. (author), Picken, S.J. (author), Caro, J. (author)

Thermal tuning of the transmission of an elastomer infilled photonic crystal cavity is studied. An elastomer has a thermal expansion-induced negative thermo-optic coefficient that leads to a strong decrease of the refractive index upon heating. This property makes elastomer highly suitable for thermal tuning of the transmission of a cavity,...

conference paper 2011

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Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal

Nguyen, H.M. (author), Dundar, M.A. (author), Van der Heijden, R.W. (author), Van der Drift, E.W.J.M. (author), Salemink, H.W.M. (author), Rogge, S. (author), Caro, J. (author)

We demonstrate a compact silicon photonic crystal Mach-Zehnder interferometer operating in the self-collimation regime. By tailoring the photonic band structure such as to produce self-collimated beams, it is possible to design beam splitters and mirrors and combine these to a 20 × 20 ?m2 format. With transmission spectroscopy we find a...

journal article 2010

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Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light

Nguyen, H.M. (author), Van der Drift, E.W.J.M. (author), Caro, J. (author), Rogge, S. (author), Salemink, H.W.M. (author)

conference paper 2010

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Sensor for Identifying at Least One Particle by Means of Raman-Spectroscopy

Caro, J. (author), Mink, J. (author), Van der Gaag, A. (author)

The application relates to a sensor for identifying at least one particle by means of Raman-spectroscopy, comprising an optical trapping system for the at least one particle, including a laser-beam source (6), acting further as a Raman excitation source for the at least one particle, and a Raman-spectrometer (7) for measuring the spectrally...

patent 2008

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Transmission measurement of the photonic band gap of GaN photonic crystal slabs

Caro, J. (author), Roeling, E.M. (author), Rong, B. (author), Nguyen, H.M. (author), Van der Drift, E.W.J.M. (author), Rogge, S. (author), Karouta, F. (author), Van der Heijden, R.W. (author), Salemink, H.W.M. (author)

A high-contrast-ratio (30 dB) photonic band gap in the near-infrared transmission of hole-type GaN two-dimensional photonic crystals (PhCs) is reported. These crystals are deeply etched in a 650 nm thick GaN layer grown on sapphire. A comparison of the measured spectrum with finite difference time domain simulations gives quantitative agreement...

journal article 2008

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Transport spectroscopy of a single atom in a FinFET

Lansbergen, G.P. (author), Rahman, R. (author), Caro, J. (author), Biesemans, S. (author), Klimeck, G. (author), Hollenberg, L.C.L. (author), Rogge, S. (author)

journal article 2008

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Biesemans, S. (author)

The authors investigate the subthreshold behavior of triple-gate silicon field-effect transistors by low-temperature transport experiments. These three-dimensional nanoscale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers down to 50×60×35?nm3....

journal article 2007

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Voltage-dependent electron distribution in a small spin valve: Mmission of nonequilibrium magnons and magnetization evolution

Kozub, I. (author), Caro, J. (author)

journal article 2007

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Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

Sellier, H. (author), Lansbergen, G.P. (author), Caro, J. (author), Rogge, S. (author), Collaert, N. (author), Ferain, I. (author), Jurczak, M. (author), Bieseman, S. (author)

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two...

journal article 2006

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Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si:B+ ground state

Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)

journal article 2004

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Stark effect in shallow impurities in Si

Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)

journal article 2004

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Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics

Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)

journal article 2004

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Direct observation by resonant tunneling of the B+ level in a o-doped silicon barrier

Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author)

journal article 2004

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Gate-induced ionization of single dopant atoms

Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)

journal article 2003

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Temperature and angular dependence of the anisotropic magnetoresistance in epitaxial Fe films

van Gorkom, R.P. (author), Caro, J. (author), Klapwijk, T.M. (author), Radelaar, S. (author)

journal article 2001

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Giant magnetoresistance of magnetic multilayer point contacts

Wellock, K. (author), Theeuwen, S.J.C.H. (author), Caro, J. (author), Gribov, N.N. (author), Van Gorkom, R.P. (author), Radelaar, S. (author), Tichelaar, F.D. (author), Hickey, B.J. (author), Marrows, C.H. (author)

journal article 1999

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Observation of strain-relaxation-induced size effects in p-type Si/SiGe resonant-tunneling diodes

Lukey, P.W. (author), Caro, J. (author), Zijlstra, T. (author), van der Drift, E. (author), Radelaar, S. (author)

journal article 1998