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Mo, J. (author), LI, J. (author), Zhang, Y. (author), Romijn, J. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Vollebregt, S. (author)In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...journal article 2023
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Zhang, Y. (author), Mo, J. (author), Cui, Z. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When...conference paper 2023
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Zhang, Y. (author), Mo, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author), May, Alexander (author), Erlbacher, Tobias (author)The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively...conference paper 2023