Nanver, L.K. (author), Sammak, A. (author), Mohammadi, V. (author), Mok, K.R.C. (author), Qi, L. (author), Sakic, A. (author), Golshani, N. (author), Darakhshandeh, J. (author), Scholtes, T.M.L. (author), De Boer, W.B. (author) Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...
journal article 2012
