A first single-photon avalanche diode fabricated in standard SOI CMOS technology with a full characterization of the device

This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...

Timing optimization utilizing order statistics and multichannel digital silicon photomultipliers

We present an optimization technique utilizing order statistics with a multichannel digital silicon photomultiplier (MD-SiPM) for timing measurements. Accurate timing measurements are required by 3D rangefinding and time-of-flight positron emission tomography, to name a few applications. We have demonstrated the ability of the MD-SiPM to detect...