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Alkemade, P.F.A. (author), Chen, P. (author), Van Veldhoven, E. (author), Maas, D. (author)
An analytical model for the growth of nanopillars by helium ion-beam-induced deposition is presented and compared to experimental data. This model describes the competition between pillar growth in vertical and lateral directions. It assumes that vertical growth is induced by incident primary ions and type-1 secondary electrons, whereas lateral...
journal article 2010
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Chen, P. (author), Van Veldhoven, E. (author), Sanford, C.A. (author), Salemink, H.W.M. (author), Maas, D.J. (author), Smith, D.A. (author), Rack, P.D. (author), Alkemade, P.F.A. (author)
A 25 keV focused helium ion beam has been used to grow PtC nanopillars on a silicon substrate by beam-induced decomposition of a (CH3)3Pt(CPCH3) precursor gas. The ion beam diameter was about 1 nm. The observed relatively high growth rates suggest that electronic excitation is the dominant mechanism in helium ion-beam-induced deposition. Pillars...
journal article 2010
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Van Veldhoven, E. (author), Sidorkin, V. (author), Chen, P. (author), Alkemade, P. (author), Van der Drift, E. (author), Salemink, H. (author), Zandbergen, H. (author), Maas, D. (author)
journal article 2010