Silicon Technology for Integrating High-Performance Low-Energy Electron Photodiode Detectors

DotFETs: MOSFETs strained by a Single SiGE dot in a Low-Temperature ELA Technology

The work presented in this thesis was performed in the context of the European Sixth Framework Program FP6 project “Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits”, referred to as the D-DotFET project. The project had the goal of realizing strain-enhanced mobility in CMOS transistors by transferring strain from a...

Low-complexity full-melt laser-anneal process for fabrication of low-leakage implanted ultrashallow junctions

Good-quality ultrashallow n + p junctions are formed using 5-keV amorphizing As+ implantations followed by a single-shot excimer laser anneal for dopant activation. By using an implant that is self-aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation...

Chemical Vapor Deposition of ?-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation

Nanometer-thick amorphous boron (?-B) layers were formed on (100) Si during exposure to diborane (B2H6) in a chemical vapor deposition (CVD) system, either at atmospheric or reduced pressures, at temperatures down to 500°C. The dependence of the growth mechanism on processing parameters was investigated by analytical techniques, such as...

Silicon doping techniques using chemical vapor dopant deposition

Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping profiles by low-temperature Si epitaxy is a...

Aluminum-Mediated Selective Solid-Phase Epitaxy of High-Quality Silicon Diodes